AFN1602EFN106RG=DMN2300UFB4-7B

General Description Features
AFN1602E, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.

20V/0.8A,RDS(ON)=280m
@VGS=4.5V

20V/0.7A,RDS(ON)=330m
@VGS=2.5V

20V/0.5A,RDS(ON)=430m
@VGS=1.8V

Low Offset (Error) Voltage

Low-Voltage Operation

High-Speed Circuits

Low Battery Voltage Operation

ESD Protected

DFN1.0X0.6-3L package design