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首頁  »  產品線總覽  »  品牌  »  ALFA-MOS

  ALFA-MOS  »  AFP1601EFN106RG




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AFP1601EFN106RG

Availability
Prices: QUOTE
Package: DFN1.0X0.6-3L
Qty in Stock: some stock need checking
Min. Order Qty: 10000


Sample Stock
Prices: QUOTE
Qty in Stock: some stock need checking

規格說明
Specification: 點此下載規格PDF
AFP1601E = DMP21D0UFB4-7B

General Description Features
AFP1601E, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
 -20V/-0.4A, RDS(ON)= 500 m@ VGS =-4.5V
 -20V/-0.3A, RDS(ON)= 680 m@ VGS =-2.5V
 -20V/-0.1A, RDS(ON)= 995 m@ VGS =-1.8V
 Low Offset (Error) Voltage
 Low-Voltage Operation
 High-Speed Circuits
 ESD Protection Diode design–in
 Low Battery Voltage Operation
 DFN1.0X0.6-3L package design
 
 
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