AFP7617WS, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
-30V/-15A,RDS(ON)=9mΩ@VGS=-10V
-30V/-10A,RDS(ON)=16mΩ@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
DFN3X3-8L package design
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