AFN3814W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
20V/ 14A,RDS(ON)=14m@VGS=4.5V
20V/ 12A,RDS(ON)=18m@VGS=2.5V
20V/ 10A,RDS(ON)=30m@VGS=1.8V
Super high density cell design for extremely low RDS (ON)
DFN3X3-8L package design
sun.flytech
1349574323
stock 
