AFN8206WS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
20V/3.0A,RDS(ON)=11m@VGS=4.5V
20V/3.0A,RDS(ON)=13m@VGS=2.5V
20V/2.5A,RDS(ON)=20m@VGS=1.8V
Super high density cell design for extremely low RDS (ON)
ESD Protection ( 2KV ) Diode design–in
DFN2X3-6L package design
sun.flytech
1349574323
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